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SIRA18DP-T1-GE3 Datasheet
Datasheet specifications
| Datasheet's name | SIRA18DP-T1-GE3 |
|---|---|
| File size | 103.598 KB |
| File type | |
| Number of pages | 13 |
Download Datasheet SIRA18DP-T1-GE3 |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SIRA18DP-T1-GE3
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 3.3W;14.7W
- Total Gate Charge (Qg@Vgs): 21.5nC@10V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 1000pF@15V
- Continuous Drain Current (Id): 33A
- Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5mΩ@10A,10V
- Package: PowerPAK-SO-8
- Manufacturer: Vishay Intertech